Browsing by Subject "H01L 21/32134"

Now showing items 1-3 of 3

    • Forming an interconnect of a semiconductor device 
      Kuo, Yue (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2003-09-02)
      Forming an interconnect of a semiconductor device includes defining a recessed structure proximate to an outer surface of a substrate of a semiconductor device. A metal layer is deposited within the recessed structure. A ...
    • Method of forming a conductive pattern by removing a compound with heat in a substantially inert atmosphere 
      Kuo, Yue (United States. Patent and Trademark Office; Texas A&M University. Libraries, 2006-05-02)
      A method for forming a conductive or magnetic pattern for a semiconductor or other electronic device includes patterning a mask layer outwardly from a conductive layer of the semiconductor device. The patterning defines ...
    • Method of producing a silicon film with micropores 
      Parker, Donald L.; Hall, Kenneth R.; Holste, James C. (United States. Patent and Trademark Office; Texas A&M University. Libraries, 1989-01-31)
      The present invention relates to a method of producing micropores having diameters of less than 20 nanometers in straight sides in silicon film. The silicon film produced by this process may be attached to a substrate ...